microstructure and dielectric properties of lpcvd/cvi-sibcn ceramics annealed at different temperatures

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2017
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Abstract
SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.
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Authors ;Jianping Li;Mingxi Zhao;Yongsheng Liu;Nan Chai;Fang Ye;Hailong Qin;Laifei Cheng;Litong Zhang
Journal Nature Materials
Year 2017
DOI
10.3390/ma10060655
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