investigation of the optoelectronic properties of ti-doped indium tin oxide thin film

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ID: 236054
2015
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Abstract
: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
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Authors ;Nen-Wen Pu;Wei-Sheng Liu;Huai-Ming Cheng;Hung-Chun Hu;Wei-Ting Hsieh;Hau-Wei Yu;Shih-Chang Liang
Journal Nature Materials
Year 2015
DOI
10.3390/ma8095316
URL
http://www.mdpi.com/1996-1944/8/9/5316
Keywords
electronics civil engineering (general)microscopydescriptive and experimental mechanics nuclear engineeringengineering (general)

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