gallium compounds

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1
Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)
B. Liu,R. Zhang,Z. L. Xie,J. Y. Kong,J. Yao,Q. J. Liu,Z. Zhang,D. Y. Fu,X. Q. Xiu,P. Chen,P. Han,Y....
2008 Applied Physics Letters DOI: 10.1063/1.2951618 170 views
2
Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes
T. Nishitani,T. Nakanishi,M. Yamamoto,S. Okumi,F. Furuta,M. Miyamoto,M. Kuwahara,K. Naniwa,O. Watana...
2005 journal of applied physics DOI: 10.1063/1.1886888 151 views

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crystal structure photoluminescence iii-v semiconductors semiconductor thin films wide band gap semiconductors mosaic structure stress effects valence bands gallium arsenide aluminium compounds electron spin polarisation semiconductor superlattices electron sources photocathodes photoemission spin polarised electron emission indium compounds