Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes

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ID: 273733
2005
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Abstract
GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlatticephotocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization[77(±5)%]. Criteria for achieving high polarization using superlatticephotocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.
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Authors T. Nishitani,T. Nakanishi,M. Yamamoto,S. Okumi,F. Furuta,M. Miyamoto,M. Kuwahara,K. Naniwa,O. Watanabe,Y. Takeda,H. Kobayakawa,Y. Takashima,H. Horinaka,T. Matsuyama,K. Togawa,T. Saka,M. Tawada,T. Omori,Y. Kurihara,M. Yoshioka,K. Kato,T. Baba,N. Yamamoto;T. Nishitani;T. Nakanishi;M. Yamamoto;S. Okumi;F. Furuta;M. Miyamoto;M. Kuwahara;K. Naniwa;O. Watanabe;Y. Takeda;H. Kobayakawa;Y. Takashima;H. Horinaka;T. Matsuyama;K. Togawa;T. Saka;M. Tawada;T. Omori;Y. Kurihara;M. Yoshioka;K. Kato;T. Baba;N. Yamamoto;
Journal journal of applied physics
Year 2005
DOI
10.1063/1.1886888
URL
https://sciprofiles.com/publication/view/3b1f17651283057498729bae42e50952
Keywords
gallium arsenide iii-v semiconductors aluminium compounds gallium compounds electron spin polarisation semiconductor superlattices electron sources photocathodes photoemission spin polarised electron emission indium compounds

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