Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes

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ID: 273733
2005
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Abstract
GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlatticephotocathodes are presented as emission sources for highly polarized electron beams. The GaAs–GaAsP cathode achieved a maximum polarization of 92(±6)% with a quantum efficiency of 0.5%, while the InGaAs–AlGaAs cathode provides a higher quantum efficiency (0.7%) but a lower polarization[77(±5)%]. Criteria for achieving high polarization using superlatticephotocathodes are discussed based on experimental spin-resolved quantum efficiency spectra.
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yamamoto2005journalhighly Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors T. Nishitani,T. Nakanishi,M. Yamamoto,S. Okumi,F. Furuta,M. Miyamoto,M. Kuwahara,K. Naniwa,O. Watanabe,Y. Takeda,H. Kobayakawa,Y. Takashima,H. Horinaka,T. Matsuyama,K. Togawa,T. Saka,M. Tawada,T. Omori,Y. Kurihara,M. Yoshioka,K. Kato,T. Baba,N. Yamamoto;T. Nishitani;T. Nakanishi;M. Yamamoto;S. Okumi;F. Furuta;M. Miyamoto;M. Kuwahara;K. Naniwa;O. Watanabe;Y. Takeda;H. Kobayakawa;Y. Takashima;H. Horinaka;T. Matsuyama;K. Togawa;T. Saka;M. Tawada;T. Omori;Y. Kurihara;M. Yoshioka;K. Kato;T. Baba;N. Yamamoto;
Journal journal of applied physics
Year 2005
DOI
10.1063/1.1886888
URL
https://sciprofiles.com/publication/view/3b1f17651283057498729bae42e50952
Keywords
gallium arsenide iii-v semiconductors aluminium compounds gallium compounds electron spin polarisation semiconductor superlattices electron sources photocathodes photoemission spin polarised electron emission indium compounds

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