Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)

Clicks: 271
ID: 270523
2008
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Popular

Ranked #11 of 42 articles by views in Applied Physics Letters

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
The m-plane GaNfilmsgrown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson–Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress εxx=−0.79% and εzz=−0.14% with an out-of-plane dilatation εyy=0.38%. This anisotropic strain further separates the energy levels of top valence band at Γ point. The energy splitting as 37meV as well as in-plane polarizationanisotropy for transitions are found by the polarized photoluminescence spectra at room temperature.
Reference Key
edwards2008appliedanisotropic Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors B. Liu,R. Zhang,Z. L. Xie,J. Y. Kong,J. Yao,Q. J. Liu,Z. Zhang,D. Y. Fu,X. Q. Xiu,P. Chen,P. Han,Y. Shi,Y. D. Zheng,S. M. Zhou,G. Edwards;B. Liu;R. Zhang;Z. L. Xie;J. Y. Kong;J. Yao;Q. J. Liu;Z. Zhang;D. Y. Fu;X. Q. Xiu;P. Chen;P. Han;Y. Shi;Y. D. Zheng;S. M. Zhou;G. Edwards;
Journal Applied Physics Letters
Year 2008
DOI
10.1063/1.2951618
URL
https://sciprofiles.com/publication/view/1a0d26303650204ef64b389f504454dc
Keywords
crystal structure photoluminescence iii-v semiconductors semiconductor thin films wide band gap semiconductors gallium compounds mosaic structure stress effects valence bands

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.