rapid growth of nanostructured diamond film on silicon and ti–6al–4v alloy substrates

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ID: 157030
2014
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Abstract
Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon.
Reference Key
samudrala2014materialsrapid Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Gopi K. Samudrala;Yogesh K. Vohra;Michael J. Walock;Robin Miles
Journal Nature Materials
Year 2014
DOI
10.3390/ma7010365
URL
http://www.mdpi.com/1996-1944/7/1/365
Keywords
electronics civil engineering (general)microscopydescriptive and experimental mechanics

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