effect of native defects on transport properties in non-stoichiometric cosb3

Efecto de los defectos nativos sobre las propiedades de transporte en CoSb3 no estequiométrico

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ID: 150501
2017
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Abstract
The effect of native defects originated by a non-stoichiometric variation of composition in CoSb3 on I-V curves and Hall effect was investigated. Hysteretic and a non-linear behavior of the  I-V curves at cryogenic temperatures were observed; the non-linear behavior originated from the Poole-Frenkel effect, a field-dependent ionization mechanism that lowers Coulomb barriers and increases emission of charge carriers, and the hysteresis was attributed to the drastic decrease of specific heat which produces Joule heating at cryogenic temperatures. CoSb3 is a narrow gap semiconductor and slight variation in the synthesis process can lead to either n- or p-type conduction. The Sb-deficient CoSb3 presented an n-type conduction. Using a single parabolic model and assuming only acoustic-phonon scattering the charge transport properties were calculated at 300 K. From this model, a carrier concentration of 1.18 × 1018 cm−3 and a Hall factor of 1.18 were calculated. The low mobility of charge carriers, 19.11 cm2/V·s, and the high effective mass of the electrons, 0.66 m0, caused a high resistivity value of 2.75 × 10−3 Ω·m. The calculated Lorenz factor was 1.50 × 10−8 V2/K2, which represents a decrease of 38% over the degenerate limit value (2.44 × 10−8 V2/K2).
Se investigó el efecto de los defectos nativos originados por una variación no estequiométrica de la composición en el CoSb3 sobre las curvas I-V y el efecto Hall. Se observaron un comportamiento histerético y no lineal en las curvas I-V a temperaturas criogénicas; el comportamiento no lineal se originó a partir del efecto Poole-Frenkel, un mecanismo de ionización dependiente del campo que reduce las barreras de Coulomb e incrementa la emisión de portadores de carga, mientras que la histéresis se atribuyó a la disminución drástica del calor específico que produce calentamiento por efecto Joule a temperaturas criogénicas. El CoSb3 es un semiconductor de banda estrecha y una ligera variación en el proceso de síntesis puede dar lugar a una conducción de tipo n o de tipo p. El CoSb3 deficiente en Sb presentó una conducción de tipo n. Utilizando un modelo parabólico simple y asumiendo únicamente la dispersión por fonones acústicos, se calcularon las propiedades de transporte de carga a 300 K. A partir de este modelo, se determinaron una concentración de portadores de 1.18 × 1018 cm−3 y un factor de Hall de 1.18. La baja movilidad de los portadores de carga, 19.11 cm2/V·s, y la alta masa efectiva de los electrones, 0.66 m0, causaron un alto valor de resistividad de 2.75 × 10−3 Ω·m. El factor de Lorenz calculado fue de 1.50 × 10−8 V2/K2, lo que representa una disminución del 38% respecto al valor del límite degenerado (2.44 × 10−8 V2/K2).
Reference Key
realyvzquez-guevara2017materialseffect Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Paula R. Realyvázquez-Guevara;Francisco J. Rivera-Gómez;Alejandro Faudoa-Arzate;María E. Botello-Zubiate;Renee J. Sáenz-Hernández;Carlos R. Santillán-Rodríguez;José A. Matutes-Aquino
Journal Nature Materials
Year 2017
DOI
10.3390/ma10030287
URL
http://www.mdpi.com/1996-1944/10/3/287
Keywords
thermoelectrics low temperature electronics civil engineering (general)microscopydescriptive and experimental mechanics

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