molecular beam epitaxy

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Removable capping layer for air-sensitive GdN.
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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
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the c(4 × 4)–a(1 × 3) surface reconstruction transition on insb(001): static versus dynamic conditions
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Nanotechnology
ISSN: 1361-6528 705 views

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capping layer gadolinium nitride rare-earth nitrides reflection high energy electron diffraction samarium scanning probe microscopy X-ray diffraction Raman Spectroscopy transmission electron microscopy 2d materials photoluminescence inse gate iii–metal chalcogenides gase quantum wells gaas(001) substrate