Sensors (Basel, Switzerland)

[1] The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².

[2] current transport mechanisms and capacitance characteristic in the inn/inp schottky structures

[3] High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

[4] A 5.8-GHz High-Power and High-Efficiency Rectifier Circuit with Lateral GaN Schottky Diode for Wireless Power Transfer

[5] A fast-neutron detection detector based on fission material and large sensitive 4H silicon carbide Schottky diode detector.

[6] The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².

[7] surface modification on the sputtering-deposited zno layer for zno-based schottky diode

[8] High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes