High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

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ID: 271617
2007
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Reference Key
yamana2007japanesehigh Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Shigeomi Hishiki,Yoshitaka Kogetsu,Ikuo Kanno,Hajimu Yamana;Shigeomi Hishiki;Yoshitaka Kogetsu;Ikuo Kanno;Hajimu Yamana;
Journal japanese journal of applied physics
Year 2007
DOI
10.1143/jjap.46.5030
URL
https://sciprofiles.com/publication/view/df55f80d57977c1daa05ba9c719b2e29
Keywords
resistivity schottky diode crystal growth raw materials compound semiconductor radiation detector diode

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