High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

Clicks: 165
ID: 271617
2007
Free PDF
Article Quality & Performance Metrics
Overall Quality Improving Quality
0.0 /100
Combines engagement data with AI-assessed academic quality
AI Quality Assessment
Not analyzed
Abstract
Abstract is not available for this article.
Login to Search Abstract
Reference Key
yamana2007japanesehigh Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Shigeomi Hishiki,Yoshitaka Kogetsu,Ikuo Kanno,Hajimu Yamana;Shigeomi Hishiki;Yoshitaka Kogetsu;Ikuo Kanno;Hajimu Yamana;
Journal japanese journal of applied physics
Year 2007
DOI
10.1143/jjap.46.5030
URL
https://sciprofiles.com/publication/view/df55f80d57977c1daa05ba9c719b2e29
Keywords
resistivity schottky diode crystal growth raw materials compound semiconductor radiation detector diode

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.