High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

Clicks: 165
ID: 271617
2007
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Authors Shigeomi Hishiki,Yoshitaka Kogetsu,Ikuo Kanno,Hajimu Yamana;Shigeomi Hishiki;Yoshitaka Kogetsu;Ikuo Kanno;Hajimu Yamana;
Journal japanese journal of applied physics
Year 2007
DOI
10.1143/jjap.46.5030
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