Interface passivation to overcome shunting in semiconductor-catalyst junctions.
Clicks: 237
ID: 91919
2020
Article Quality & Performance Metrics
Overall Quality
Improving Quality
0.0
/100
Combines engagement data with AI-assessed academic quality
Reader Engagement
Popular Article
68.0
/100
236 views
191 readers
Trending
AI Quality Assessment
Not analyzed
Abstract
High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.
| Reference Key |
shadabipour2020interfacechemical
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | Shadabipour, Parisa;Hamann, Thomas W; |
| Journal | Chemical communications (Cambridge, England) |
| Year | 2020 |
| DOI |
10.1039/c9cc09597g
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.