Interface passivation to overcome shunting in semiconductor-catalyst junctions.

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ID: 91919
2020
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Ranked #43 of 184 articles by views in Chemical communications (Cambridge, England)

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Abstract
High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.
Reference Key
shadabipour2020interfacechemical Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Shadabipour, Parisa;Hamann, Thomas W;
Journal Chemical communications (Cambridge, England)
Year 2020
DOI
10.1039/c9cc09597g
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