Substrate induced nanoscale resistance variation in epitaxial graphene.

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ID: 89099
2020
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Abstract
Graphene, the first true two-dimensional material, still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances is still an open issue. Here, we quantitatively investigate local transport properties of graphene prepared by polymer assisted sublimation growth using scanning tunneling potentiometry. These samples exhibit a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H silicon carbide substrate and with the distance between the graphene and the substrate. Our results experimentally quantify the impact of the graphene-substrate interaction on the local transport properties of graphene.
Reference Key
sinterhauf2020substratenature Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Sinterhauf, Anna;Traeger, Georg A;Momeni Pakdehi, Davood;Schädlich, Philip;Willke, Philip;Speck, Florian;Seyller, Thomas;Tegenkamp, Christoph;Pierz, Klaus;Schumacher, Hans Werner;Wenderoth, Martin;
Journal Nature communications
Year 2020
DOI
10.1038/s41467-019-14192-0
URL
Keywords
surface functionalization ph sensitivity dipole moments ion‐sensitive field‐effect transistors super‐nernstian response

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