Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

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ID: 79171
2019
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Abstract
Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 field-effect transistors with mobility up to 121 cm2 V−1 s−1.
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liu2019conformalnature Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
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Journal Nature communications
Year 2019
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