Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

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ID: 78432
2020
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pu2020influencejournal Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Pu, T.
Journal journal of crystal growth
Year 2020
DOI
10.1016/j.jcrysgro.2019.125395
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