Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Clicks: 362
ID: 66591
2016
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Popular

Ranked #10 of 44 articles by views in beilstein journal of nanotechnology

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.
Reference Key
kleinschmidt2016precisebeilstein Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Kleinschmidt, Ann-Kathrin;Barzen, Lars;Strassner, Johannes;Doering, Christoph;Fouckhardt, Henning;Bock, Wolfgang;Wahl, Michael;Kopnarski, Michael;
Journal beilstein journal of nanotechnology
Year 2016
DOI
DOI not found
URL
https://doi.org/10.3762/bjnano.7.171
Keywords
Materials of engineering and construction. Mechanics of materials Chemical technology Technology Science physics

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.