Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition.

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ID: 52049
2019
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Abstract
MoS 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low-dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS structure providing dynamic resistive memory is reported. The resistive switching of the MoS NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS 2H-1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real-time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.
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fu2019molybdenumsmall Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Fu, Xiao;Zhang, Lei;Cho, Hak D;Kang, Tae Won;Fu, Dejun;Lee, Dongjin;Lee, Sang Wuk;Li, Luying;Qi, Tianyu;Chan, Abdul S;Yunusov, Ziyodbek A;Panin, Gennady N;
Journal Small (Weinheim an der Bergstrasse, Germany)
Year 2019
DOI
10.1002/smll.201903809
URL
Keywords
photoinduced phase transition 2d crystals and qds dynamic photomemristors liquid phase exfoliation neuromorphic computing

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