Post-thermal-Induced Recrystallization in GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry.

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ID: 36327
2018
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Abstract
Here, we investigate the stoichiometry control of GaAs/AlGaAs droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown "strain-free" QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with well-controlled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects.
Reference Key
yeo2018postthermalinducedacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Yeo, Inah;Yi, Kyung Soo;Lee, Eun Hye;Song, Jin Dong;Kim, Jong Su;Han, Il Ki;
Journal ACS omega
Year 2018
DOI
10.1021/acsomega.8b01078
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