Post-thermal-Induced Recrystallization in GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry.

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ID: 36327
2018
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Abstract
Here, we investigate the stoichiometry control of GaAs/AlGaAs droplet epitaxy (DE) quantum dots (QDs). Few tens of core nonstoichiometries in the Ga(As) atomic percent are revealed in as-grown "strain-free" QDs using state-of-the-art atomic-scale energy-dispersive X-ray spectroscopy based on transmission electron microscopy. Precise systematic analyses demonstrate a successful quenching of the nonstoichiometry below 2%. The control of the chemical reactions with well-controlled ex situ annealing sheds light on the engineering of a novel single-photon source of strain-free DE QDs free of defects.
Reference Key
yeo2018postthermalinducedacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors
Journal ACS omega
Year 2018
DOI
10.1021/acsomega.8b01078
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