Wafer-scale subwavelength excimer lithography enabled by dry-transferable photoresist

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ID: 324239
2026
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Abstract
Abstract The rapid development of micro- and nanoscale devices has driven demand for wafer-scale, high-resolution nanostructure fabrication, which remains challenging for current nanolithography technologies. Here, we develop a cost-effective and high-throughput lithographic strategy for patterning sub-wavelength nanostructures over wafer-scale areas. This strategy is based on perfect conformal contact lithography combined with vacuum ultraviolet excimer irradiation at 172 nm. Using specially modified, transferable polymethyl methacrylate as a photoresist, the resulting approach enables high-fidelity, wafer-scale (8 inch) replication and fabrication of nanoscale (100 nm) patterns on both rigid and flexible substrates. We further develop a physical pattern-transfer method enabling high-resolution, solvent-free lift-off over large areas with 100% yield. The applicability of the lithography and pattern transfer strategy is demonstrated by the fabrication of 6560 nano-gap electrode structures over an area of 4 cm2 for MoS₂ transistor fabrication. Together with the demonstration of 12 representative transistors exhibiting on/off ratios approximately 108 and a large-aperture (10 cm) metalens enabling high-quality long-distance imaging, these results confirm the applicability of the proposed lithography and pattern transfer strategy across both electronic and optical devices.
Reference Key
openalex_W7201869354 Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Yu Zhou, Zhiwen Shu, Quan Wang, Fu Fan, Xiaoxue Bi, Yueqiang Hu, Guanhua Zhang, Guan Liu, N. Zhang, Lei Chen, Huigao Duan
Journal national science review
Year 2026
DOI
10.1093/nsr/nwag477
URL
https://doi.org/10.1093/nsr/nwag477
Keywords Keywords not found

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