Wafer-scale subwavelength excimer lithography enabled by dry-transferable photoresist

Clicks: 25
ID: 324239
2026
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #118 of 423 articles by views in national science review

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 423 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Abstract The rapid development of micro- and nanoscale devices has driven demand for wafer-scale, high-resolution nanostructure fabrication, which remains challenging for current nanolithography technologies. Here, we develop a cost-effective and high-throughput lithographic strategy for patterning sub-wavelength nanostructures over wafer-scale areas. This strategy is based on perfect conformal contact lithography combined with vacuum ultraviolet excimer irradiation at 172 nm. Using specially modified, transferable polymethyl methacrylate as a photoresist, the resulting approach enables high-fidelity, wafer-scale (8 inch) replication and fabrication of nanoscale (100 nm) patterns on both rigid and flexible substrates. We further develop a physical pattern-transfer method enabling high-resolution, solvent-free lift-off over large areas with 100% yield. The applicability of the lithography and pattern transfer strategy is demonstrated by the fabrication of 6560 nano-gap electrode structures over an area of 4 cm2 for MoS₂ transistor fabrication. Together with the demonstration of 12 representative transistors exhibiting on/off ratios approximately 108 and a large-aperture (10 cm) metalens enabling high-quality long-distance imaging, these results confirm the applicability of the proposed lithography and pattern transfer strategy across both electronic and optical devices.
Reference Key
openalex_W7201869354 Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Yu Zhou, Zhiwen Shu, Quan Wang, Fu Fan, Xiaoxue Bi, Yueqiang Hu, Guanhua Zhang, Guan Liu, N. Zhang, Lei Chen, Huigao Duan
Are you one of these authors? Claim your profile
Journal national science review
Year 2026
DOI
10.1093/nsr/nwag477
URL
https://doi.org/10.1093/nsr/nwag477
Keywords Keywords not found

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.