Direct synthesis of p-type PbS quantum dot inks toward wafer-scale SWIR imaging

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ID: 320694
2026
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Abstract
Abstract PbS quantum dots (QDs) are highly promising for scalable short-wave infrared (SWIR) optoelectronics due to their tunable bandgap and solution-processability. While efficient devices require well-defined p-n homojunctions, the fabrication of p-type QD layers remains a critical bottleneck compared with the well-established n-type QD inks. Current fabrication of p-type QD layers relies on solid-state ligand exchange (SSLE). However, SSLE suffers from incomplete ligand replacement and non-uniform oxidation, causing film inhomogeneity that prevents wafer-scale manufacturing. Here, we report a direct synthesis of p-type PbS QD inks with tunable QD size, optical absorption, and p-type electronic characteristics. This ink yields conductive p-type films on 6-inch Si substrates with highly uniform thickness. Using this strategy, we realize SWIR photodetectors with fully ink-processed PbS QD p–n junctions, together with a prototype imaging module. When integrated with a recognition algorithm, the imager provides SWIR images that facilitate vehicle recognition under foggy conditions. This work establishes a scalable route toward future high-performance, wafer-level SWIR optoelectronic platforms.
Reference Key
openalex_W7168031666 Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Ying Liu, Shengyu Ma, Chengjie Deng, Chunmeng Liu, Yu Yin, Kunyuan Lu, Guozheng Shi, Lin Yuan, Yao Yin, J ZHU, XJ Huang, Lizhen Huang, Jianlong Xu, Liang Gao, Zeke Liu, W X
Journal national science review
Year 2026
DOI
10.1093/nsr/nwag421
URL
https://doi.org/10.1093/nsr/nwag421
Keywords Keywords not found

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