Realizing superior interfacial thermal conductance between β -Ga2O3 and diamond through metal-assisted epitaxial strategy
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ID: 315098
2026
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Abstract
Abstract β-Ga2O3 exhibits great potential for next-generation power electronics, while its low thermal conductivity poses a challenge to efficient heat dissipation. We address this challenge by developing a gallium-assisted epitaxial strategy to synthesize highly-oriented β-Ga2O3 film on diamond. The β-Ga2O3 presents a high thermal conductivity of 9.0 W m−1 K−1 and low thermal boundary resistance of 6.05 m2 K GW−1. In-situ experiments reveal a high interfacial bonding strength (> 2.09 GPa), resulting from the atomically sharp and covalently bonded interface. The identified new interfacial phonon mode at ∼60 meV through the vibrational electron energy-loss spectroscopy can significantly enhance the phonon transport between diamond and β-Ga2O3. The developed gallium-assisted strategy may mitigate the thermal constraints of β-Ga2O3, offering a promising route for the heterointegration of β-Ga2O3-based power devices with diamond.
| Reference Key |
openalex_W7162488004
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| Authors | 黄文韬, Yuehui Li, Tianqi Bai, Jing Zhou, Li X, Jie Zhu, Ying Guo, Longbin Yan, W. Yan, Bingqi Linghu, Lingrao Fu, Xiaodong Wang, Jiaojiao Sun, Huanjie Yang, Shaobo Cheng, Peng Gao, Chongxin Shan |
| Journal | national science review |
| Year | 2026 |
| DOI |
10.1093/nsr/nwag308
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| URL | |
| Keywords | Keywords not found |
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