Growth and characterization of InAs epitaxial layer on GaAs(111)B
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ID: 271114
2004
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Abstract
The behavior of InAs deposition on $\mathrm{Ga}\mathrm{As}(111)B$ substrates and the corresponding routes toward strain relaxation have been investigated. InAs growth was for depositions ranging from 2 monolayers to 30 monolayers. Over this deposition range, different routes for strain relaxation caused by the lattice mismatch were observed. The strain relaxed through ragged step edge formation and Ga-In intermixing for low InAs deposition and through the formation of step bunching and dislocations for thicker depositions.
| Reference Key |
wen2004physicalgrowth
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|---|---|
| Authors | H. Wen;Zh. M. Wang;J. L. Shultz;B. L. Liang;G. J. Salamo; |
| Journal | physical review b |
| Year | 2004 |
| DOI |
doi:10.1103/PhysRevB.70.205307
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