Irradiation temperature dependence of radiation damage in STI Si diodes

Clicks: 207
ID: 270766
2003
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Abstract
Results are presented of a detailed study of the effects of a high-temperature 2-MeV electron irradiation on the performance degradation of STI (shallow trench isolation) diodes. Reverse current increases after irradiation. After 20 °C irradiation, two majority hole capture levels with (Ev+0.18 eV) and (Ev+0.34 eV) were induced. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperature.
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Authors H. Ohyama,K. Hayama,K. Takakura,T. Miura,K. Shigaki,T. Jono,E. Simoen,A. Poyai,C. Claeys;H. Ohyama;K. Hayama;K. Takakura;T. Miura;K. Shigaki;T. Jono;E. Simoen;A. Poyai;C. Claeys;
Journal microelectronic engineering
Year 2003
DOI
10.1016/s0167-9317(02)00937-1
URL
https://sciprofiles.com/publication/view/b66fe940a382db04b0b8f41ca01556e9
Keywords
sti (shallow trench isolation) diode high-temperature electron irradiation degradation of performance

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