Local equilibrium and global relaxation of strained SiGe∕Si(001) layers

Clicks: 129
ID: 270580
2006
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #32 of 38 articles by views in physical review b

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
We investigate the morphological evolution of islands obtained by epitaxial growth of Ge on Si(001) substrates. We are able to obtain highly uniform distributions of SiGe islands, which exhibit a ``barn'' shape. In addition to previously observed facets, we identify higher index facets, which are not observed in dome-shaped islands. The evolution of the island-related facet area provides evidence of a transition from domes to steeper barns, which continues the sequence of coherent island types before the onset of plastic relaxation. For higher Ge coverages, when plastically relaxed islands (superdomes) form, the island ensemble loses its homogeneity. This is essentially the result of anomalous coarsening, with material being transferred from coherent islands to larger superdomes.
Reference Key
stoffel2006physicallocal Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors M. Stoffel;A. Rastelli;J. Tersoff;T. Merdzhanova;O. G. Schmidt;
Journal physical review b
Year 2006
DOI
doi:10.1103/PhysRevB.74.155326
URL
https://dx.doi.org/10.1103/PhysRevB.74.155326
Keywords

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.