A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: the Si, Ti and N results
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ID: 270510
2001
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Abstract
We report a multi-element, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiNx/Si(100) thin films as a function of the TiNx film thickness (100Å-500Å) and of the annealing temperature (400°C-600°C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiNx layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560°C at which the TiNx film is known to fail to act as an effective diffusion barrier between Al and Si.
| Reference Key |
bancroft2001journala
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| Authors | Y. F. Hu,T. K. Sham,Z. Zou,G. Q. Xu,L. Chan,B. W. Yates,G. M. Bancroft;Y. F. Hu;T. K. Sham;Z. Zou;G. Q. Xu;L. Chan;B. W. Yates;G. M. Bancroft; |
| Journal | journal of synchrotron radiation |
| Year | 2001 |
| DOI |
10.1107/s0909049500018252
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