Smart GaN platform: Performance & challenges
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ID: 269697
2017
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Abstract
This paper explores the next stage of GaN power devices with 2-level integration of peripheral low voltage active and passive devices. The 1st level consists of protection/control/driving circuits, which potentially improves the performance and overcomes the challenges to the power devices. The 2nd level integration has high-low side on-chip integration on a 100V technology platform. The challenge of channel modulation due to substrate bias sharing is effectively eliminated by the invented new scheme. The system efficiency of DC-DC buck converter using such scheme is enhanced with lower on-state resistance and good stability.
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kalnitsky20172017smart
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| Authors | Chun-Lin Tsai,Yun-Hsiang Wang,M.-H. Kwan,P.-C. Chen,F.-W. Yao,S.-C. Liu,J.-L. Yu,C.-L. Yeh,R.-Y. Su,W. Wang,W.-C. Yang,K.-Y. Wong,Y.-S. Lin,M.-C. Lin,H.-Y. Wu,C.-M. Chen,C.-Y. Yu,C.-B. Wu,M.-H. Chang,J.-S. You,T.-M. Huang,S.-P. Wang,L. Y. Tsai,Chan-Hong Chern,H. C. Tuan,Alex Kalnitsky;Chun-Lin Tsai;Yun-Hsiang Wang;M.-H. Kwan;P.-C. Chen;F.-W. Yao;S.-C. Liu;J.-L. Yu;C.-L. Yeh;R.-Y. Su;W. Wang;W.-C. Yang;K.-Y. Wong;Y.-S. Lin;M.-C. Lin;H.-Y. Wu;C.-M. Chen;C.-Y. Yu;C.-B. Wu;M.-H. Chang;J.-S. You;T.-M. Huang;S.-P. Wang;L. Y. Tsai;Chan-Hong Chern;H. C. Tuan;Alex Kalnitsky; |
| Journal | 2017 IEEE International Electron Devices Meeting (IEDM) |
| Year | 2017 |
| DOI |
10.1109/iedm.2017.8268488
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