Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN

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ID: 269195
2007
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Abstract
Using the Debye model and existing experimental data of the pyroelectric coefficient of AlN, the temperature dependence of the pyroelectric coefficient as well as the spontaneous polarization of AlN is calculated over a wide temperature range from 0to1000K. The pyroelectric coefficient is proportional to T3 at low temperature and increases acutely from 0 to around 400K, and then increases gently from 400to1000K. It makes AlN uniquely suitable for application in high temperaturepyroelectric sensors. The spontaneous polarization of AlN changes a little from 0to1000K, which indicates that the features of III-nitrides based devices will hardly be degraded by the change of the spontaneous polarization.
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Authors W. S. Yan,R. Zhang,X. Q. Xiu,Z. L. Xie,P. Han,R. L. Jiang,S. L. Gu,Y. Shi,Y. D. Zheng;W. S. Yan;R. Zhang;X. Q. Xiu;Z. L. Xie;P. Han;R. L. Jiang;S. L. Gu;Y. Shi;Y. D. Zheng;
Journal Applied Physics Letters
Year 2007
DOI
10.1063/1.2741600
URL
https://sciprofiles.com/publication/view/2adc1646b5bb2efd3d53402b1fff99c1
Keywords
iii-v semiconductors wide band gap semiconductors aluminium compounds pyroelectricity dielectric polarisation

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