High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

Clicks: 326
ID: 267727
2014
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #1 of 5 articles by views in review of scientific instruments

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
The setup of an apparatus for chemical vapor deposition(CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction,scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.
Reference Key
greber2014reviewhigh Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors A. Hemmi,C. Bernard,H. Cun,S. Roth,M. Klöckner,T. Kalin,M. Weinl,S. Gsell,Matthias Schreck,J. Osterwalder,T. Greber;A. Hemmi;C. Bernard;H. Cun;S. Roth;M. Klöckner;T. Kalin;M. Weinl;S. Gsell;Matthias Schreck;J. Osterwalder;T. Greber;
Journal review of scientific instruments
Year 2014
DOI
10.1063/1.4866648
URL
https://sciprofiles.com/publication/view/11169cc09b4faed246b3fad172da5e1e
Keywords
chemical vapour deposition atomic layer deposition annealing boron compounds high-temperature effects iii-v semiconductors low energy electron diffraction plasma materials processing scanning tunnelling microscopy semiconductor growth semiconductor thin films surface cleaning ultraviolet spectra wide band gap semiconductors x-ray photoelectron spectra

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.