Epitaxial Growth of Sc0.09Al0.91N and Sc0.18Al0.82N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications

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ID: 266770
2020
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Abstract
Scandium aluminum nitride (ScxAl1-xN) films are currently intensively studied for surface acoustic waves (SAW) filters and sensors applications, because of the excellent tradeoff they present between high SAW velocity, large piezoelectric properties and wide bandgap for the intermediate compositions with an Sc content between 10 and 20%. In this paper, the growth of Sc0.09Al0.91N and Sc0.18Al0.82N films on sapphire substrates by sputtering method is investigated. The plasma parameters were optimized, according to the film composition, in order to obtain highly-oriented films. X-ray diffraction rocking-curve measurements show a full width at half maximum below 1.5°. Moreover, high-resolution transmission electron microscopy investigations reveal the epitaxial nature of the growth. Electrical characterizations of the Sc0.09Al0.91N/sapphire-based SAW devices show three identified modes. Numerical investigations demonstrate that the intermediate compositions between 10 and 20% of scandium allow for the achievement of SAW devices with an electromechanical coupling coefficient up to 2%, provided the film is combined with electrodes constituted by a metal with a high density.
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bartoli2020sensorsepitaxial Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Florian Bartoli;Jérémy Streque;Jaafar Ghanbaja;Philippe Pigeat;Pascal Boulet;Sami Hage-Ali;Natalya Naumenko;A. Redjaïmia;Thierry Aubert;Omar Elmazria;Bartoli, Florian;Streque, Jérémy;Ghanbaja, Jaafar;Pigeat, Philippe;Boulet, Pascal;Hage-Ali, Sami;Naumenko, Natalya;Redjaïmia, A.;Aubert, Thierry;Elmazria, Omar;
Journal sensors
Year 2020
DOI
10.3390/s20164630
URL
https://www.mdpi.com/1424-8220/20/16/4630
Keywords
sputtering scaln thin films hetero-epitaxial films saw sensors

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