dynamic tuning of transmission wavelength of mems-based ge waveguides on a si beam

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ID: 256556
2016
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Abstract
Three-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si beam by ~40 nm. This shift was reproduced by the deformation potential theory, considering that mode of propagation in the Ge waveguide. The wavelength tuning range obtained makes it possible to cover the whole C-band of optical communication, indicating it to be a promising approach to electro-absorption Ge modulators to get them to work with a broader wavelength range than previously reported.
Reference Key
hirase2016photonicsdynamic Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Masashi Hirase, Luan M. Nguyen, Hiroshi Fukuda, Yasuhiko Ishikawa, Kazumi Wada
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Journal pakistan journal of medical sciences
Year 2016
DOI
10.3390/photonics3020014
URL
http://www.mdpi.com/2304-6732/3/2/14
Keywords
photonics

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