dynamic tuning of transmission wavelength of mems-based ge waveguides on a si beam
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ID: 256556
2016
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Abstract
Three-dimensional structures of microelectro-mechanical systems (MEMS)-based Ge waveguide on a Si beam were fabricated for dynamic tuning of the fundamental absorption edge of Ge by external stressing. The application of various amounts of external forces up to 1 GPa onto the Si beam shows clear red-shifts in the absorption edge of Ge waveguides on the Si beam by ~40 nm. This shift was reproduced by the deformation potential theory, considering that mode of propagation in the Ge waveguide. The wavelength tuning range obtained makes it possible to cover the whole C-band of optical communication, indicating it to be a promising approach to electro-absorption Ge modulators to get them to work with a broader wavelength range than previously reported.
| Reference Key |
hirase2016photonicsdynamic
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|---|---|
| Authors | ;Masashi Hirase;Luan M. Nguyen;Hiroshi Fukuda;Yasuhiko Ishikawa;Kazumi Wada |
| Journal | pakistan journal of medical sciences |
| Year | 2016 |
| DOI |
10.3390/photonics3020014
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| URL | |
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