study of a silicon power diode using a time dependent hydrodynamic model

Clicks: 143
ID: 240966
2003
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Abstract
A one-dimensional device simulator based on the hydrodynamic model is developed for the simulation and analysis of high voltage ambipolar devices. This simulator has the capability for both self-consistent transient  and steady state regime study. The discretization scheme used in the algorithm shows good numerical stability and accuracy. A transient simulation study is carried out on a PIN diode.  Information about electrical potential, electron and holes concentration, carriers temperatures, average velocities, considering the transient response to a high voltage, shows this simulator  quite a good tool to study power devices in futures trends. While no significant differences appear between our results and drift diffusion model ones, for the quiescent state, it is not the case for the transient regime. Moreover, our model does not handle  some strong simplification hypothesis;  for instance  it is pointed out that carrier explicit acceleration term can not be  dodged so easily, as reported before, for an accurate transient study.
Reference Key
tabikh2003sciencesstudy Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;S TABIKH;S LATRECHE;H MOREL;C MAILLE;C GONTRAND
Journal journal of big data
Year 2003
DOI
DOI not found
URL
http://revue.umc.edu.dz/index.php/a/article/view/1067
Keywords Keywords not found

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