Thermodynamic Studies of β-GaO Nanomembrane Field-Effect Transistors on a Sapphire Substrate.

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ID: 23259
2017
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Abstract
The self-heating effect is a severe issue for high-power semiconductor devices, which degrades the electron mobility and saturation velocity, and also affects the device reliability. On applying an ultrafast and high-resolution thermoreflectance imaging technique, the direct self-heating effect and surface temperature increase phenomenon are observed on novel top-gate β-GaO on insulator field-effect transistors. Here, we demonstrate that by utilizing a higher thermal conductivity sapphire substrate rather than a SiO/Si substrate, the temperature rise above room temperature of β-GaO on the insulator field-effect transistor can be reduced by a factor of 3 and thereby the self-heating effect is significantly reduced. Both thermoreflectance characterization and simulation verify that the thermal resistance on the sapphire substrate is less than 1/3 of that on the SiO/Si substrate. Therefore, maximum drain current density of 535 mA/mm is achieved on the sapphire substrate, which is 70% higher than that on the SiO/Si substrate due to reduced self-heating. Integration of β-GaO channel on a higher thermal conductivity substrate opens a new route to address the low thermal conductivity issue of β-GaO for power electronics applications.
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zhou2017thermodynamicacs Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Zhou, Hong;Maize, Kerry;Noh, Jinhyun;Shakouri, Ali;Ye, Peide D;
Journal ACS omega
Year 2017
DOI
10.1021/acsomega.7b01313
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