a memristor as multi-bit memory: feasibility analysis

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ID: 226042
2015
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Ranked #37 of 100 articles by views in molecular therapy : the journal of the american society of gene therapy

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Abstract
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies. We show here an example for such non-binary device with the design of a multi-bit memory. While conventional memory cells can store only 1 bit, memristors-based multi-bit cells can store more information within single device thus increasing the information storage density. Such devices can potentially utilize the non-linear resistance of memristor materials for efficient information storage. We analyze the performance of such memory devices based on their expected variations in order to determine the viability of memristor-based multi-bit memory. A design of read/write scheme and a simple model for this cell, lay grounds for full integration of memristor multi-bit memory cell.
Reference Key
bass2015radioengineeringa Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;O. Bass;A. Fish;D. Naveh
Journal molecular therapy : the journal of the american society of gene therapy
Year 2015
DOI
DOI not found
URL
http://www.radioeng.cz/fulltexts/2015/15_02_0425_0430.pdf
Keywords
memristor electronics nuclear engineering

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