diffusivity of point defects in the passive film on stainless steel

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ID: 217651
2011
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Abstract
The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials. Based on the Mott-Schottky analysis, an exponential relationship between donor density and the film formation potentials of the passive films was developed. The results showed that the donor densities evaluated from Mott-Schottky plots are in the range 2-3 × 1021 cm−3 and decreased with the film formation potential. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficient of the donors, (𝐷𝑂), is calculated to be approximately 3.12 × 10−16 cm2/s.
Reference Key
fattah-alhosseini2011internationaldiffusivity Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;A. Fattah-alhosseini;M. H. Alemi;S. Banaei
Journal BMJ open quality
Year 2011
DOI
10.4061/2011/968512
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