ionization annealing of semiconductor crystals. part two: the experiment
Clicks: 310
ID: 191712
2014
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This
article has not been analysed, so there is no overall score —
reader engagement is measured and shown alongside.
Reader Engagement
Steady Performance
30.0
/100
310 views
37 readers
AI Quality Assessment
Not analyzed
Readership in this journal
SteadyRanked #9 of 26 articles by views in premiere educandum
Most read
Least read
Bar heights use a square-root scale.
Mint this article as an NFT
Not yet mintedCreate a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.
5
SUSD
one-off · no wallet required
Abstract
There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV) results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5—10–6 A/cm2, the energy — 0,3—1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects) under irradiation with powerful (high current) pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1—10 ns, Ω = 1—10 Hz, j = 20—300 A/cm2). In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.
| Reference Key |
s.2014tekhnologiyaionization
Use this key to autocite in the manuscript while using
SciMatic Manuscript Manager or Thesis Manager
|
|---|---|
| Authors | ;Garkavenko A. S.;Mokritskii V. A.;Banzak O. V.;Zavadskii V. A. |
| Journal | premiere educandum |
| Year | 2014 |
| DOI |
http://dx.doi.org/10.15222/TKEA2014.2.51
|
| URL | |
| Keywords |
Citations
No citations found. To add a citation, contact the admin at info@scimatic.org
Comments
No comments yet. Be the first to comment on this article.