power lateral pnp transistor operating with high current density in irradiated voltage regulator

The operation of power lateral pnp transistors in gamma radiation field was examined by detection of the minimum dropout voltage on heavily loaded low-dropout voltage regulators LM2940CT5, clearly demonstrating their low radiation hardness, with unacceptably low values of output voltage and collector-emitter voltage volatility. In conjunction with previous results on base current and forward emitter current gain of serial transistors, it was possible to determine the positive influence of high load current on a slight improvement of voltage regulator LM2940CT5 radiation hardness. The high-current flow through the wide emitter aluminum contact of the serial transistor above the isolation oxide caused intensive annealing of the positive oxide-trapped charge, leading to decrease of the lateral pnp transistor's current gain, but also a more intensive recovery of the small-signal npn transistors in the control circuit. The high current density in the base area of the lateral pnp transistor immediately below the isolation oxide decreased the concentration of negative interface traps. Consequently, the positive influence of the reduced concentration of the oxide-trapped charge on the negative feedback reaction circuit, together with the favourable effect of reduced interface traps concentration, exceeded negative influence of the annealed oxide-trapped charge on the serial pnp transistor's forward emitter current gain.