the electric characteristics simulation and structural parameters calculation of si-based stabilitron with stabilizing voltage 6,5 v
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ID: 163125
2009
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Abstract
The results of an optimization simulation of original manufacturing process and electric characteristics of stabilitrons with stabilizing voltage Ust=(6,5±0,5) V are presented. The flow of manufacturing process of simulated stabilitron includes the n+-type guard rings regions formation in the р-type substrate; the р–n-junction formation in the р-type substrate; intermediate oxide formation; metal deposition. The stabilizing voltage and differential resistance of the stabilitron voltage-current characteristic reverse branch values were received as the result of calculations at the normal, reduced and high temperature.
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| Authors | ;Koritko N. N.;Syakerskiy V. S.;Dudar N. L. |
| Journal | premiere educandum |
| Year | 2009 |
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