ni and ni silicides ohmic contacts on n-type 6h-sic with medium and low doping level

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ID: 161527
2011
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Ranked #20 of 100 articles by views in molecular therapy : the journal of the american society of gene therapy

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Abstract
Ni silicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structures were ohmic with low contact resistivity approximately 8×10-4 Ω cm2 after annealing at 960°C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070°C to see ohmic behavior appearing with resistivities reaching 8×10-3 Ω cm2 and this was valid only for Ni and Ni2Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is expected to be overcome for example with a covering layer.
Reference Key
cichon2011radioengineeringni Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;S. Cichon;B. Barda;P. Machac
Journal molecular therapy : the journal of the american society of gene therapy
Year 2011
DOI
DOI not found
URL
www.radioeng.cz/fulltexts/2011/11_01_209_213.pdf
Keywords
silicon carbide ohmic contact electronics nuclear engineering ramanelectrical engineering

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