effect of annealing and of effect of annealing and of cooling rates on n-gaas electrode photoelectrochemical characteristics
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ID: 149734
2004
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Abstract
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems
has been investigated. The photocurrent densities vs potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.
| Reference Key |
hilal2004activeeffect
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|---|---|
| Authors | ;Hikmat S. Hilal;Subhi K. Salih;Iyad A. Sa'adeddin;Guy Campet |
| Journal | anales de psicologia |
| Year | 2004 |
| DOI |
10.1080/0882751031000116115
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| URL | |
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