effect of ga2o3 addition on the properties of y2o3-doped aln ceramics
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ID: 139500
2015
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Abstract
Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN
ceramics was investigated under the constraint of total sintering additives
(Y2O3 and Ga2O3) of 4.5 wt%. Ga was detected in the AlN grain as well as the
grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary
crystalline phases in all of the investigated compositions. As the
substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase
decreased while that of YAlO3 was more or less similar. Neither additional
secondary phases was identified, nor was the sinterability inhibited by the
Ga2O3 addition; the linear shrinkage and apparent density were above 20
percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance
and the elastic modulus generally decreased whereas the Poisson ratio
increased significantly. The dielectric constant and the loss tangent of
4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63
and 0.003, respectively.
| Reference Key |
h.2015scienceeffect
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|---|---|
| Authors | ;Shin H.;Yoon-Ok S.;Kim S.;Bang S. |
| Journal | european romantic review |
| Year | 2015 |
| DOI |
10.2298/SOS1501023S
|
| URL | |
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