study the efficiency of single crystal cdte/zncds solar cell at various temperatures and illumination levels

Clicks: 393
ID: 133094
2015
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Popular

Ranked #5 of 19 articles by views in Journal of complementary & integrative medicine

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Abstract
CdTe is the best suited semiconductor for solar cells due to its band gap value 1.47 eV which is close to solar spectrum, low sublimation temperature and high absorption coefficient in the range of solar spectrum. To improve the photovoltaic performance of CdS/CdTe thin film solar cells, the CdS window layer is alloyed with different concentration of ZnS to reduce the resistivity and increase the band gap values. The single crystal CdTe based solar cell devices were prepared by vacuum evaporation method and have undergone for different temperature at various illumination levels to enhance the cell efficiency. We have achieved 14.37% efficiency and increased short circuit current density and open circuit voltage by reducing series resistance of the cell.
Reference Key
zia2015energystudy Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors ;Rehana Zia;Farhat Saleemi;Shahzad Naseem;Zohra Kayani
Journal Journal of complementary & integrative medicine
Year 2015
DOI
10.1016/j.egyr.2015.01.002
URL
Keywords

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

No comments yet. Be the first to comment on this article.