Effective silicon production from SiCl source using hydrogen radicals generated and transported at atmospheric pressure.

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ID: 128002
2020
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Abstract
In the Siemens method, high-purity Si is produced by reducing SiHCl source gas with H ambient under atmospheric pressure. Since the pyrolysis of SiHCl, which produces SiCl as a byproduct, occurs dominantly in the practical Siemens process, the Si yield is low (~30%). In the present study, we generated hydrogen radicals (H-radicals) at pressures greater than 1 atm using tungsten filaments and transported the H-radicals into a reactor. On the basis of the absorbance at 600 nm of WO-glass exposed to H-radicals in the reactor, we observed that H-radicals with a density of ~1.1 × 10 cm were transported approximately 30 cm under 1 atm. When SiCl was supplied as a source into the reactor containing H-radicals and allowed to react at 850°C or 900°C, Si was produced more efficiently than in reactions conducted under H ambient. Because the H-radicals can effectively reduce SiCl, which is a byproduct in the Siemens method, their use is expected to increase the Si yield for this method.
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okamoto2020effectivescience Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Okamoto, Yuji;Sumiya, Masatomo;Nakamura, Yuya;Suzuki, Yoshikazu;
Journal science and technology of advanced materials
Year 2020
DOI
10.1080/14686996.2020.1789438
URL
Keywords
301 chemical syntheses / processing hydrogen radical sicl4 siemens method w-filament

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