Structure and Process of Infrared Hot Electron Transistor Arrays

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ID: 113008
2012
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Abstract
An infrared hot-electron transistor (IHET) 5 × 8 array with a common base configuration that allows two-terminal readout integration was investigated and fabricated for the first time. The IHET structure provides a maximum factor of six in improvement in the photocurrent to dark current ratio compared to the basic quantum well infrared photodetector (QWIP), and hence it improved the array S/N ratio by the same factor. The study also showed for the first time that there is no electrical cross-talk among individual detectors, even though they share the same emitter and base contacts. Thus, the IHET structure is compatible with existing electronic readout circuits for photoconductors in producing sensitive focal plane arrays.
Reference Key
fu2012sensorsstructure Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Richard Fu;Fu, Richard;
Journal sensors
Year 2012
DOI
10.3390/s120506508
URL
https://www.mdpi.com/1424-8220/12/5/6508
Keywords
quantum well infrared photodetector (qwip) infrared hot-electron transistor (ihet) gaas National Center for Biotechnology Information NCBI NLM MEDLINE pubmed abstract nih national institutes of health national library of medicine pmid:22778655 pmc3386754 doi:10.3390/s120506508 richard fu

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