Computational Analysis of Low-Energy Dislocation Configurations in Graded Layers

Clicks: 275
ID: 111608
2020
Free PDF
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #13 of 46 articles by views in crystals

Most read Least read

Bar heights use a square-root scale.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
Graded layers are widely exploited in semiconductor epitaxy as they typically display lower threading dislocation density with respect to constant-composition layers. However, strain relaxation occurs via a rather complex distribution of misfit dislocations. Here we exploit a suitable computational approach to investigate dislocation distributions minimizing the elastic energy in overcritical constant-composition and graded layers. Predictions are made for SiGe/Si systems, but the methodology, based on the exact (albeit in two dimensions and within linear elasticity theory) solution of the stress field associated with a periodic distribution of defects, is general. Results are critically compared with experiments, when possible, and with a previous mean-field model. A progressive transition from one-dimensional to two-dimensional distributions of defects when continuous linear grading is approached is clearly observed. Interestingly, analysis of the low-energy distribution of dislocations reveals close analogies with typical pile-ups as produced by dislocation multiplication.
Reference Key
lanzoni2020crystalscomputational Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Daniele Lanzoni;Fabrizio Rovaris;Francesco Montalenti;Lanzoni, Daniele;Rovaris, Fabrizio;Montalenti, Francesco;
Journal crystals
Year 2020
DOI
10.3390/cryst10080661
URL
https://www.mdpi.com/2073-4352/10/8/661/htm
Keywords
modeling dislocation heteroepitaxy sige

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.