The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm².
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2017
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Abstract
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low dark current, a good energy resolution, and a high neutron/gamma discrimination for pulsed radiation, showing the advantages in charged particle detection and neutron detection in high-temperature and high-radiation environments.| Reference Key |
liu2017thesensors
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| Authors | Liu, Lin-Yue;Wang, Ling;Jin, Peng;Liu, Jin-Liang;Zhang, Xian-Peng;Chen, Liang;Zhang, Jiang-Fu;Ouyang, Xiao-Ping;Liu, Ao;Huang, Run-Hua;Bai, Song; |
| Journal | Sensors (Basel, Switzerland) |
| Year | 2017 |
| DOI | E2334 |
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