Metal nanoparticle film-based room temperature Coulomb transistor.

Clicks: 179
ID: 99846
2017
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Abstract
Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.
Reference Key
willing2017metalscience Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Willing, Svenja;Lehmann, Hauke;Volkmann, Mirjam;Klinke, Christian;
Journal Science advances
Year 2017
DOI
10.1126/sciadv.1603191
URL
Keywords
petra iv diffraction-limited storage ring ultralow-emittance source

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