Influence of graphene oxide on metal-insulator-semiconductor tunneling diodes.

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2012
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Abstract
In recent years, graphene studies have increased rapidly. Graphene oxide, which is an intermediate product to form graphene, is insulating, and it should be thermally reduced to be electrically conductive. We herein describe an attempt to make use of the insulating properties of graphene oxide. The graphene oxide layers are deposited onto Si substrates, and a metal-insulator-semiconductor tunneling structure is formed and its optoelectronic properties are studied. The accumulation dark current and inversion photocurrent of the graphene oxide device are superior to the control device. The introduction of graphene oxide improves the rectifying characteristic of the diode and enhances its responsivity as a photodetector. At 2 V, the photo-to-dark current ratio of the graphene oxide device is 24, larger than the value of 15 measured in the control device.
Reference Key
lin2012influencenanoscale Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Lin, Chu-Hsuan;Yeh, Wei-Ting;Chan, Chun-Hui;Lin, Chun-Chieh;
Journal nanoscale research letters
Year 2012
DOI
10.1186/1556-276X-7-343
URL
Keywords
Reduced graphene oxide heterojunctions photodetector arrays silicon nanowires

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