Au-InSe van der Waals Schottky junctions with ultralow reverse current and high photosensitivity.

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ID: 92848
2020
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Abstract
The Schottky junction, composed of a rectifying metal-semiconductor interface, is an essential component for microelectronic and optoelectronic devices. However, due to the considerable reverse tunneling current, typical Schottky junctions cannot be widely applied in devices requiring high signal-to-noise ratios, such as photodetectors with high detectivity. Here, a van der Waals (vdW) Schottky junction is constructed by mechanically stacking a gold (Au) electrode onto a multilayer indium selenide (InSe) nanosheet, which shows an ultralow reverse current in sub-picoamperes and an excellent rectification ratio exceeding 106 at room temperature. The reverse current, which corresponds to the thermionic emission transport model, is independent of the applied reverse bias. As a result, the Au-InSe vdW Schottky junction device can function as an ultrasensitive photodetector with a photodetectivity over 2.4 × 1015 Jones, corresponding to a photoresponsivity of 853 A W-1 and a light on/off ratio exceeding 1 × 107. The work offers an idea for investigating electronic and optoelectronic devices with high signal-to-noise ratios based on vdW Schottky junctions.
Reference Key
hu2020auinsenanoscale Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Hu, Siqi;Zhang, Qiao;Luo, Xiaoguang;Zhang, Xutao;Wang, Tao;Cheng, Yingchun;Jie, Wanqi;Zhao, Jianlin;Mei, Ting;Gan, Xuetao;
Journal Nanoscale
Year 2020
DOI
10.1039/c9nr08791e
URL
Keywords
bm3d bilateral filter dictionary learning filtering gaussian patch-pca filtering k-svd non-local means filtering patch-based image denoising probabilistic patch-based filtering

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