Characteristics of GaN-Based Nanowire Gate-All-Around (GAA) Transistors.

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ID: 90589
2020
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Abstract
We investigate the DC, , and pulse performances in GaN-based nanowire gate-all-around (GAA) transistors with two kinds of geometry: one is AlGaN/GaN heterostructure with two dimensional electron gas (2DEG) channel and the other is only GaN layer without 2DEG channel. From and curves, the fabricated GaN nanowire GAA transistor with AlGaN layer clearly exhibits normally-on operation with negative threshold voltage () due to the existence of 2DEG channel on the trapezoidal shaped GaN nanowire. On the other hand, the GaN nanowire GAA transistor without AlGaN layer presents a positive (normally-off operation) due to the absent of 2DEG channel on the triangle shaped GaN nanowire. However, both devices show the similar temperaturedependent characteristics due to the combination of bulk channel and surface channel in GaN nanowire GAA channel are mostly contributed, rather than the 2DEG channel. GaN-based nanowire GAA transistors demonstrate to almost negligible current collapse phenomenon due to the perfect GAA gate structure in GaN nanowire. The proposed GaN-based nanowire GAA transistors are very promising candidate for both high power device and nano-electronics application.
Reference Key
im2020characteristicsjournal Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Im, Ki-Sik;Reddy, Mallem Siva Pratap;Choi, Jinseok;Hwang, Youngmin;Roh, Jea-Seung;An, Sung Jin;Lee, Jung-Hee;
Journal Journal of nanoscience and nanotechnology
Year 2020
DOI
10.1166/jnn.2020.17784
URL
Keywords
chemokine il-8 glaucoma de ángulo abierto (gaa) open-angle glaucoma (oag) quimioquina

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