A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems.

Clicks: 293
ID: 89051
2019
Article Quality & Performance Metrics
Overall Quality
Not rated
Combines reader engagement with the AI quality analysis. This article has not been analysed, so there is no overall score — reader engagement is measured and shown alongside.
AI Quality Assessment
Not analyzed
Readership in this journal
Steady

Ranked #621 of 1,694 articles by views in sensors

Most read Least read

Bar heights use a square-root scale. Only the 120 most-read articles are drawn; the journal has 1,694 in total.

Mint this article as an NFT
Not yet minted

Create a permanent, verifiable on-chain record of this article on the Scimatic Network. The NFT is held in your Journament account, and you can withdraw it to your own wallet at any time.

5 SUSD one-off · no wallet required
Sign in to mint
Abstract
For stable and effective control of the sensor system, analog sensor signals such as temperature, pressure, and electromagnetic fields should be accurately measured and converted to digital bits. However, radiation environments, such as space, flight, nuclear power plants, and nuclear fusion reactors, as well as high-reliability applications, such as automotive semiconductor systems, suffer from radiation effects that degrade the performance of the sensor readout system including analog-to-digital converters (ADCs) and cause system malfunctions. This paper investigates an optimal ADC structure in radiation environments and proposes a successive- approximation-register (SAR) ADC using delay-based double feedback flip-flops to enhance the system tolerance against radiation effects, including total ionizing dose (TID) and single event effects (SEE). The proposed flip-flop was fabricated using 130 nm complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) process, and its radiation tolerance was measured in actual radiation test facilities. Also, the proposed radiation-hardened SAR ADC with delay-based dual feedback flip-flops was designed and verified by utilizing compact transistor models, which reflect radiation effects to CMOS parameters, and radiation simulator computer aided design (CAD) tools.
Reference Key
ro2019asensors Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Ro, Duckhoon;Min, Changhong;Kang, Myounggon;Chang, Ik Joon;Lee, Hyung-Min;
Journal sensors
Year 2019
DOI
E171
URL
Keywords
sar adc see tid compact model flip-flop radiation-hardened soft error

Citations

No citations found. To add a citation, contact the admin at info@scimatic.org

Comments

No comments yet. Be the first to comment on this article.