Adiabatic two-step photoexcitation effects in intermediate-band solar cells with quantum dot-in-well structure.

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ID: 88310
2019
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Abstract
We studied the dynamics of electrons generated by two-step photoexcitation in an intermediate-band solar cell (IBSC) comprising InAs/GaAs/AlGaAs dot-in-well (DWELL) structure using time-resolved photocurrent (TRPC) measurement. The examined IBSC exhibited considerably slower photocurrent decay than a conventional InAs/GaAs quantum dot IBSC, which is due to the extraordinarily long-lived electrons in the DWELL. In order to retrieve the electron lifetime from the decay profile, we developed a model reproducing the observed decay and performed parameter fitting. The fitting results indicate that the electron lifetime in the DWELL is approximately 30 μs. In the two-colour excitation TRPC measurement, we found that an additional infrared (IR) light accelerates the photocurrent decay while the photocurrent increases by approximately 3%, because the additional IR light causes two-step photoexcitation of electrons in the DWELLs towards the conduction band. Furthermore, we demonstrated that the open-circuit voltage increases with increasing of the contribution of the second IR excitation process.
Reference Key
asahi2019adiabaticscientific Use this key to autocite in the manuscript while using SciMatic Manuscript Manager or Thesis Manager
Authors Asahi, Shigeo;Kaizu, Toshiyuki;Kita, Takashi;
Journal Scientific reports
Year 2019
DOI
10.1038/s41598-019-44335-8
URL
Keywords
solar cell carrier transport defect gallium arsenide near field

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